INVESTIGATION OF ALPHA PARTICLE INDUCED SINGLE-EVENT UPSETS IN CHARGE-COUPLED DEVICES

Authors
  1. Pepper, G.T.
  2. Fechete, A.
Corporate Authors
Defence Research Establishment Ottawa, Ottawa ONT (CAN)
Abstract
The mechanisms for generation of single-event upsets (SEUs) in a linear charge-coupled device (CCD) were studied through irradiation with monoenergetic 5.48 MeV alpha particles from a very low flux 241Am source. Spatial correlation ("cluster" analysis) of soft errors due to single alpha particle hits was demonstrated to be a necessary prerequisite for quantitative analysis of different SEU error-generating phenomena. The Texas Instruments TC-103 virtual phase CCD used in this study is shown to be sensitive to alpha particles not only in the vicinity of photo-sites as expected, but also in the transport CCDs. This latter effect may have adverse consequences for applications employing CCDs as position-sensitive ionizing radiation detectors. The techniques developed in this work for the analysis of one dimensional arrays is readily extensible to two dimensional CCD arrays.
Report Number
DREO-1114 —
Date of publication
15 Dec 1991
Number of Pages
50
DSTKIM No
92-00752
CANDIS No
103646
Format(s):
Hardcopy;Originator's fiche received by DSIS

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