THE TEMPERATURE DEPENDENCE OF A LARGE DYNAMIC RANGE PHOTODETECTOR STRUCTURE

Authors
  1. Inkol, R.J.
Corporate Authors
Defence Research Establishment Ottawa, Ottawa ONT (CAN)
Abstract
A recently developed photodetector circuit exploits the exponential voltage-to-current characteristic of a MOSFET operated in the subthreshold region to achieve a logarithmic steady state response. This paper analyzes the temperature dependence of the circuit operation and presents experimental results demonstrating the capabilities and limitations of the model.
Report Number
DREO-TN-91-35 — Technical Note
Date of publication
15 Dec 1991
Number of Pages
25
DSTKIM No
92-01044
CANDIS No
103935
Format(s):
Hardcopy;Originator's fiche received by DSIS

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