IMPROVEMENT OF THE RESPONSE OF A SILICON DETECTOR BY THE ADDITION OF LAYERS OF COPPER OR TIN

Authors
  1. McGowan, S.
Corporate Authors
Defence Research Establishment Ottawa, Ottawa ONT (CAN)
Abstract
The response enhancement of a silicon radiation detector by the addition of thin layers of copper or tin has been investigated experimentally at 145 keV and by computer methods over a range of photon energies. It has been demonstrated that the technique can be used, along with the appropriate choices of photon filtration and cut-off energies, to improve the energy response of a silicon detector of thickness 200 to 300 mu m.
Report Number
884 —
Date of publication
15 Dec 1983
Number of Pages
17
DSTKIM No
84-01220
CANDIS No
120669
Format(s):
Hardcopy;Originator's fiche received by DSIS

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