THE STRUCTURE OF HC1 DOPED SILICON OXIDES AND OF THE OVERLAYING METALLIZATION

Authors
  1. Bouchard, M.
  2. Hartman, W.A.
  3. Kuley, R.M.
Corporate Authors
Communications Research Centre, Ottawa ONT (CAN)
Abstract
The addition of chlorine during processing improves the dielectric properties of silicon dioxide by reducing the concentration of mobile ions in the oxide. Since about 1973 the industry has adopted an optimum value of approximately 4 vol % HC1:O2 because of possible detrimental effects at higher concentrations of chlorine. It was found quantitatively that at higher concentrations of chlorine (e.g. 10 vol % HC1:O2 mixture) the oxide surface becomes irregular and the excess chlorine forms pockets within the oxide. Truncated
Report Number
1298 —
Date of publication
15 Oct 1976
Number of Pages
27
DSTKIM No
77-01380
CANDIS No
124152
Format(s):
Hardcopy;Originator's fiche received by DSIS

Permanent link

Document 1 of 1

Date modified: