EFFECT OF DIFFUSION ON THE SATURATION CURVE OF A PLANE PARALLEL ION CHAMBER

Authors
  1. Tate, P.A.
Corporate Authors
Defence Chemical Biological and Radiation Labs, Ottawa ONT (CAN)
Abstract
Equations which include diffusion effects are derived for the electric field in an irradiated ion chamber. Numerical solutions are obtained by machine computer for degrees of saturation from 0.2 to 0.93. These solutions enable calculations to be made which agree closely with the experimental results of Shevyrev. An analytical expression is derived for the degree of saturation when recombination and space charge are negligible. The formula of Rossi and Staub may be interpreted as a limiting case of this expression.
Report Number
DCBRL-502 — Reprint; Previously accessioned as DSIS 66-15693
Date of publication
15 May 1966
Number of Pages
12
Reprinted from
Physics in Medicine and Biology, vol 11, no 4, 1966, p 521-532
DSTKIM No
92-03737
CANDIS No
127087
Format(s):
Hardcopy;Originator's fiche received by DSIS

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