SINGLE EVENT UPSET (SEU) TESTING OF SEMICONDUCTOR COMPONENTS AT MCMASTER ACCELERATOR LABORATORY

Authors
  1. Davies, J.A.
  2. Almeida, F.J.D.
  3. Comedi, D.
  4. Stark, J.W.
Corporate Authors
McMaster Univ, Hamilton ONT (CAN) McMaster Accelerator Lab;Defence Research Establishment Ottawa, Ottawa ONT (CAN)
Abstract
Summarizes recent changes made to the Single Event Upset (SEU) facility at the McMaster Accelerator Laboratory to improve its performance; the results of international experiments evaluating the response of specific memories to cosmic-ray radiation; and results of experiments determining the charge collection efficiency of detectors to high Linear Energy Transfer (LET) ions.
Report Number
MCMASTER-A/C5-27142 — Contractor Report
Date of publication
15 Mar 1991
Number of Pages
32
DSTKIM No
93-00071
CANDIS No
127630
Format(s):
Hardcopy;Originator's fiche received by DSIS

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