NEUTRON RADIATION INDUCED DEGRADATION OF DIODE CHARACTERISTICS

Authors
  1. Khanna, S.M.
  2. Pepper, G.T.
  3. Stone, R.E.
Corporate Authors
Defence Research Establishment Ottawa, Ottawa ONT (CAN)
Abstract
Neutron radiation effects on diode current-voltage characteristics have been studied for a variety of diodes over 1xE13 to 3xE15 n/square cm 1 MeV equivalent neutron fluence range. A classification scheme consisting of three types of neutron effects on diode forward characteristics is proposed here for the first time. For constant forward I sub F higher than that in the generation-recombination regime, the diode voltage V sub F either increases with fluence phi (Type 1 diode), or V sub F first decreases with phi at lower fluence levels and then increases with phi at higher fluence levels (Type 2 diode), or V sub decreases with phi at all fluence levels used in this work (Type 3 diode). Most of the previous results on p-n junction diodes correspond to Type 1 diode results. Type 2 diode results are rather rare in the literature. Several examples of Type 2 diode results are presented here. Type 3 diode results are reported here for other types of diodes not reported earlier. These results are explained qualitatively in terms of the theories for p-n junction and for radiation effects on semiconductors. It is shown that a Type 3 diode could be developed as a high neutron fluence monitor with three orders of magnitude higher upper limit than the Harshaw p-i-n diode neutron fluence monitor under evaluation at the US Army Aberdeen Proving Grounds, Aberdeen Md. The results also suggest a methodology for radiation hard diode development.
Report Number
DREO-1155 —
Date of publication
01 Dec 1992
Number of Pages
40
DSTKIM No
93-01102
CANDIS No
129109
Format(s):
Hardcopy;Originator's fiche received by DSIS

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