A GENERAL SURVEY OF TRANSIENT-RADIATION EFFECTS ON ELECTRONICS (TREE), WITH PARTICULAR REFERENCE TO SEMICONDUCTOR DEVICES

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Authors
  1. Johnson, F.A.
Corporate Authors
Defence Research Establishment Ottawa, Ottawa ONT (CAN)
Abstract
The basic effects produced in semiconductors by both ionizing and displacement radiation are summarized and related to the parameter changes which are observed in semiconductor devices. Ionization and displacement effects produced by transient radiation in diodes, transistors, four-layer devices and integrated circuits are described, and a brief summary is given of the effects of radiation on miscellaneous components such as resistors, capacitors and coaxial cables. Various techniques for radiation hardening of semiconductor devices and circuits are reviewed, and methods for predicting the effects of radiation are discussed briefly.
Report Number
656 —
Date of publication
15 Apr 1972
Number of Pages
61
DSTKIM No
72-03989
CANDIS No
14861
Format(s):
Document Image stored on Optical Disk;Originator's fiche received by DSIS

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