SOSDOR: SOLID STATE DEVICE SIMULATOR

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Authors
  1. Varga, L.
Corporate Authors
Defence Research Establishment Ottawa, Ottawa ONT (CAN)
Abstract
A 3-D solid state device simulator code "SOSDOR", developed at DREO, is presented. The code uses a seven-point finite difference scheme to discretize Poisson and the continuity equations. The equations are then solved using the Newton-Raphson iteration method. Additional information pertaining to griding, carrier mobility and recombination models as well as boundary conditions incorporated into the code are also presented. The source files of the code and the graphical I/O interfaces are also described. The code was tested by simulating a PIN diode under O V bias and under a 20V reverse bias condition. The simulation results are in excellent agreement with the results of simulation of the same device by the industry-standard PADRE code.
Keywords
SOSDOR CODE;PADRE CODE
Report Number
DREO-1235 —
Date of publication
10 Oct 1994
Number of Pages
25
DSTKIM No
95-00706
CANDIS No
148874
Format(s):
Hardcopy;Document Image stored on Optical Disk

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