A MICROWAVE FET OSCILLATOR DESIGN APPROACH AND ITS APPLICATION IN AN INJECTION-LOCKED OSCILLATOR

Authors
  1. Morrison, P.
  2. Douville, R.
Corporate Authors
Communications Research Centre, Ottawa ONT (CAN)
Abstract
A low power 14 GHz MIC GaAs FET oscillator has been designed. The analytical model of the oscillator and design approach used are discussed in detail. A shunt feedback oscillator configuration was employed. Approximations were made to account for FET large signal effects in the design for maximum oscillator output power. An expression relating oscillator output power to feedback loop loss is presented. The requirement for filtering in the feedback loop is discussed. Experimental results are compared with theory and found to be in good agreement.
Report Number
1347 —
Date of publication
15 Jan 1982
Number of Pages
45
DSTKIM No
82-01146
CANDIS No
35727
Format(s):
Hardcopy;Originator's fiche received by DSIS

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