HIGH SPEED GALLIUM ARSENIDE SWITCHES

Authors
  1. Durtler, W.
  2. Townsley, P.
  3. Young, L.
Corporate Authors
British Columbia Univ, Vancouver BC (CAN) Dept of Electrical Engineering;Defence Research Establishment Ottawa, Ottawa ONT (CAN)
Abstract
The development of high speed gallium arsenide monolithic sample and hold switches are investigated in this report. The procedures on designing sample and hold circuits are reviewed. Models were used to help design and simulate the sampling switch. An extensive review of GaAs MESFET fabrication technologies is investigated. The processing steps for the refractory metal self-aligned gate technology are given in detail. The basic fabrication methods are found to be satisfactory.
Date of publication
15 Jul 1986
Number of Pages
129
DSTKIM No
87-00099
CANDIS No
48952
Format(s):
Hardcopy;Originator's fiche received by DSIS

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