SINGLE EVENT UPSET (SEU) AND OTHER ION EFFECTS ON SEMICONDUCTOR MATERIALS AND DEVICES

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Authors
  1. Davies, J.A.
  2. Almeida, F.J.D.
  3. Stark, J.W.
Corporate Authors
McMaster Univ, Hamilton ONT (CAN) McMaster Accelerator Lab;Defence Research Establishment Ottawa, Ottawa ONT (CAN)
Abstract
The McMaster University dedicated Single Event Upset (SEU) beamline continues to prove its value as a world-class cosmic-ray simulation facility for examining space radiation effects on electronics. The report summarizes work on upset and latchup in selected semiconductor memories, radiation damage on GaAs and heavy ion dosimetry using bubble detectors.
Keywords
Single Event Upset (SEU);Heavy ions;Latchup;Bubble detectors
Report Number
DREO-CR-93-631 — Contractors Report
Date of publication
01 Apr 1992
Number of Pages
25
DSTKIM No
97-01354
CANDIS No
501752
Format(s):
Hardcopy;Document Image stored on Optical Disk

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