44.5 GHz PHEMT POWER AMPLIFIER

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Authors
  1. McLelland, S.
  2. Stubbs, M.G.
  3. Morin, G.A.
Corporate Authors
Communications Research Centre, Ottawa ONT (CAN);Defence Research Establishment Ottawa, Ottawa ONT (CAN)
Abstract
The work described in this report represents the design phase of a gallium arsenide monolithic microwave integrated circuit (GaAs MMIC) power amplifier using pseudomorphic high electron mobility transistors (PHEMTs). The main purpose was to investigate the possible performance of a power amplifier at 44 GHz for future application in a phased array antenna system. The design of a two stage amplifier, providing over 12 dB of gain over the frequency range 43.5 - 45.5 GHz, is described along with the expected large signal performance. It is expected that the amplifier will provide over 20 dBm of output power. The final layout of the complete chip is also presented.
Keywords
Pseudomorphic High Electron Mobility Transistors;PHEMT
Report Number
CRC-97-007 — Technical Report
Date of publication
01 Dec 1997
Number of Pages
41
DSTKIM No
98-00451
CANDIS No
507094
Format(s):
Hardcopy;Document Image stored on Optical Disk

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