Resistive YBaCuO Micro Bolometers for Infrared Imaging Applications

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Authors
  1. Phong, L.N.
  2. Qiu, S.N.
  3. Tremblay, B.
Corporate Authors
Defence Research Establishment Valcartier, Valcartier QUE (CAN)
Abstract
Details of the fabrication process and figures of merit of resistive YBaCuO micro bolometers are reported. Thin films of YBaCuO were prepared on Si wafers under conditions that promote formation of the semi-conducting phase at room temperatures. Effects of the preparation conditions on activation energy of YBaCuO were studied to obtain films with a large temperature coefficient of resistance (TCR). TCR with values of up to 0.04 K 1(-) was achieved uniformly on 10-cm wide wafer areas. Bulk micromaching was used to create 60 x 60 mu m square bolometers on Si3N4 bridges with a thermal conductance of approximates to 7.6 x E-7 W/K. The low frequency responsivity and detectivity of the micro bolometers were respectively aprpoximates to 7 x E4 V/W and 3 x E9 cm. Hz 1/2 /W at room temperatures. These figures compare favourably with figures of other classes of uncooled mirco bolometer and are consistent with those derived from thermal properties of the bridge. Under normal operating conditions and assuming f/1.0 optics, the NETD of focal planes that make use of these micro bolometers was estimated to be less than 50 mK in the spectral range of 8 to 14 mu m.
Keywords
Defence Research Establishment Valcartier;Microbolometer detector;Micromachining;INfrared focal array;YBaCuO
Date of publication
01 Jun 1999
Number of Pages
7
Reprinted from
SPIE- Journal, vol 3740, 1999, p 472-475
DSTKIM No
99-00945
CANDIS No
510846
Format(s):
Hardcopy;Document Image stored on Optical Disk

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