Gigaelectron-Volt Heavy ion Irradiation of Gallium Arsenide


  1. Carlone, C.
  2. Parenteau, M.
  3. Khanna, S.M.
Corporate Authors
Defence Research Establishment Ottawa, Ottawa ONT (CAN)
Gallium arsenide grown by metalorganic chemical vapor deposition and n doped with silicon to nominal concentrations by 2 x E15, and 2 x E16 cm 3(-), was irradiated with 1.04 GeV bromine ions at a fluence of 5 x E9 cm 2(-), 1.7 GeV iodine ions at a fluence of 2.7 x E9 cm 2(-), and 1.5 GeV gold ions in the fluence range of 1.0 x E6 -2.2 x E9 cm 2(-). The effects were analyzed by photoluminescence (PL) spectroscopy. The donor-to-gallium vacancy (D-V Ga) and the donor-to-silicon-acceptor (D-Si As) transitions are observed in the PL spectra of the irradiated samples. The former occurs at 1.476 cV, and the latter at 1.483 eV when the recording temperature is 6.5 K. The relative introduction rates of the VGa and SiAs defects for these ions are compared to those obtained in previous studies where electrons, protons, alpha particles, lithium ions, and oxygen ions were the irradiating particles. The measured values correlate with relativistic (Darwin-Rutherford) or nonrelativistic (Rutherford) scattering theory, depending on the projectile energy. The relevance of the GeV heavy ion irradiation with cosmic rays is discussed.
Spacecraft electronics
Date of publication
05 Jan 1998
Number of Pages
Reprinted from
Journal of Applied Physics, Vol 83, no 10, 1998, p 5164-5170
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