Multi-Spectral QWIP-LED Devices: A Feasibility Study

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Authors
  1. Chiu, S.
  2. Liu, H.C.
  3. Dupont, E.
  4. Buchanan, M.
  5. Song, C.Y.
  6. and others
Corporate Authors
Defence Research Establishment Ottawa, Ottawa ONT (CAN);National Research Council of Canada, Ottawa ONT (CAN)
Abstract
The recent advances in infrared sensing technology have made it possible to use infrared sensors to support environmental observations, surveillance, threat detection, tracking, and target identification. For space-based ballistic missile defence (BMD) related applications, the most important detector requirements are: high sensitivity, high uniformity, large format, and multicolor capabilities. Quantum well infrared photodetectors (QWIPs) are a relatively new candidate technology for BMD applications. The current Canadian QWIP technology is based on integration of the QWIP with a light emitting diode (QWIP-LED). As the infrared technology continues to advance, there is a growing demand for multispectral (or multicolor) detectors with better target discrimination and identification. The objects of this study are first to identify the current QWIP-LED imaging scheme. The scheme has its unique design constraints associated with the QWIP-LED architecture. Some inherent limitations of the QWIP-LED scheme to achieving simultaneous multispectral registration are also discussed. Several multicolor QWIP-LED implementations are described, including two-lead pixelless QWIP-LED devices with sequential multicolor registration and Multi-lead bicolor QWIP-LED focal plane array with near 100% fill factor.
Keywords
QWIP(Quantum Well Infrared Photodetectors);Thermal detectors;Quantum well detectors;Light Emitting Diode (LED);Multispectral;Multicolour;Multicolor;Detector Fill Factor
Report Number
DREO-TM-1999-090 — Technical Memorandum
Date of publication
01 Oct 1999
Number of Pages
46
DSTKIM No
CA000267
CANDIS No
512281
Format(s):
Hardcopy;Document Image stored on Optical Disk

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