Comparison of Proton, Neutron and Electron Radiation-Induced Electron Traps in N-GaAs Epilayers Studied by Deep Level Transient Spectroscopy


  1. Khanna, S.M.
  2. Yousefi, G.H.
  3. Webb, J.B.
  4. Wasilewski, Z.
Corporate Authors
Defence Research Establishment Ottawa, Ottawa ONT (CAN);National Research Council of Canada, Ottawa ONT (CAN)
This paper compares the deep level transient spectroscopy (DLTS) study of proton radiation-induced defects in molecular beam epitaxy (MBE) n-GaAs with that of the defects generated in n-GaAs by high energy electron and neutron radiation. For proton irradation, it was found that the density of radiation-induced traps increased with radiation fluence. The activation energies, capture cross sections and trap desnities with respect to radiation fluence are reported. Some of the observed traps have the same signatures as those reported previously for proton-irradiated vapour phase epitaxy (VPE) and liquid phase epitaxy (LPE) GaAs. The detailed structure of the trap previously designated as PR4 by Eisen et al is also presented. This structure is observed for the first time as two distinct peaks in the DLTS spectra of proton-irradiated MBE n-GaAs corresponding to two bulk traps in GaAs film independent of their position within the film. The results are compared to previous studies of neutron and electron irradiated n-GaAs performed in our laboratory. The results indicate that some defect centres are generated by all three types of high energy particles discussed in this work, but that others are radiation-type dependent. The significance of the nature of the irradiating particle and the unirradiated GaAs in the growth of radiation-induced defects is identified.
Spacecraft electronics;Satellites;Space radiation;Space-based platforms
Report Number
DREO-TM-1999-129 — Technical Memorandum
Date of publication
01 Dec 1999
Number of Pages
Hardcopy;Document Image stored on Optical Disk

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