Analysis of the radiation environment effects on electronic components in near-earth orbits

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Authors
  1. Varga, L.
  2. Horvath, E.
  3. Cousins, T.
Corporate Authors
Defence Research Establishment Ottawa, Ottawa ONT (CAN)
Abstract
The radiation environment at two low altitude orbits have been calculated with the NASA space environment models and codes AP8/AE8, Vette, and CREME. LET spectra and device upset rates for various solar activity scenarios have been determined. Dose deposition into silicon targets as a function of Aluminum shielding thickness has been also calculated with a Monte Carlo code. The results indicate that parameters such as orbit altitude, shielding thickness, and solar activity strongly affect the SEU rates.
Keywords
LET (linear energy transfer);SEU (single event upset);Space radiation environment;Trapped radiation;Low Earth Orbits;Space environment code;Monte Carlo code;Solar activity;Satellite electronic components;LET spectrum;Dose deposition;Upset rates
Report Number
DREO-TM-2000-071 — Technical Memorandum
Date of publication
01 Nov 2000
Number of Pages
32
DSTKIM No
CA010459
CANDIS No
514950
Format(s):
Hardcopy;Document Image stored on Optical Disk

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