Design and measurement of a 44.5 GHz PHEMT power amplifier

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Authors
  1. McLelland, S.R.
  2. Stubbs, M.G.
  3. Morin, G.A.
Corporate Authors
Defence Research Establishment Ottawa, Ottawa ONT (CAN);Communications Research Centre, Ottawa ONT (CAN)
Abstract
The work described in this report represents the design phase of a gallium arsenide monolithic microwave integrated circuit (GaAs MMIC) power amplifier using pseudomorphic high electron mobility transistors (PHEMTs). The main purpose was to investigate the possible performance of a power amplifier at 44 GHz for future application in a phased array antenna system. The design of a two stage amplifier, covering teh frequency range 43.5 - 45.5 GHz, is described along with measured results. The final layout of the complete chip is also presented.
Keywords
Millimeter wave circuits;Monolithic circuits;Pseudomorphic High Electron Mobility Transistors;PHEMT;SSPA
Report Number
DREO-TR-2000-112;CRC-RP-2000-001 — Technical Report
Date of publication
01 Nov 2000
Number of Pages
68
DSTKIM No
CA010813
CANDIS No
515061
Format(s):
Hardcopy;Document Image stored on Optical Disk

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