Stress synergy in proton induced single event effects in SRAM. The effects of prior gamma irradation on the SEE cross sections for SRAM devices

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Authors
  1. Erhardt, L.S.
  2. Cousins, T.
  3. Estan, D.
Corporate Authors
Defence Research Establishment Ottawa, Ottawa ONT (CAN)
Abstract
A study was conducted to determine the effect of prior exposure to radiation on the proton-induced single event effect (SEE) cross section for SRAM devices. This was done in order to determine whether or not proton testing of virgin parts accurately determines the likely rate of single effects for these parts in a space environment. Two types of SRAM parts were exposed to various doses of gamma radiation and then tested with identifical proton irradiations to determine their SEE cross section. The results of these experiments were analyzed to determine the expected number of SEE events for these devices in typical space radiation environments, including the radiation environment of RADARSAT II. Both types of SRAM chips showed an increase in the SEE rate with prior radiation exposure. One type of SRAM, the D43100ACZ-70L, showed such a dramatic increase in the SEE rate that early failure in a satellite mission due to natural radiation, or in the event of an exo-atmospheric nuclear detonation, is likely.

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Report Number
DREO-TR-2001-122 — Technical Report
Date of publication
01 Nov 2001
Number of Pages
46
DSTKIM No
CA020919
CANDIS No
517648
Format(s):
Hardcopy;Document Image stored on Optical Disk

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