Étude du VO2 Déposé par Pulvérisation Magnétron RF comme Matériau Fonctionnel pour la Commutation IR

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Authors
  1. Paradis, S.
Corporate Authors
Defence R&D Canada - Valcartier, Valcartier QUE (CAN)
Abstract
Thin film fabrication of vanadium dioxide (VO2) by magnetron radio frequence (RF) sputtering technique was investigated at the Micro-systems laboratory. This functional material shows a semiconductor/metal transition that is suited for applications that require IR transmission or reflection attenuation (infrared switch). A MOS structure (Metal/Oxide/Semiconductor) respectively for silicon/silicon oxide/VO2 was produced and experiments were conducted to verify the semiconductor/metal transition properties (optical and electrical) of the thin films produced herein. When subjected to a rise of temperature, the MOS structure showed a thermochromic transition phase with a transition temperature of about 60°C for the specimen tested. The corresponding observed decrease in resistance was 3 ranges of order as well as an optical transmission decrease in the far IR range (8-12 microns) down to about 5%. Electrochromic phase transition was briefly investigated by applying a pulsed voltage varying from 0 to 40V but results were not conclusive and need further investigation.

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Report Number
DRDC-VALCARTIER-TN-2005-375 — Technical Note
Date of publication
01 Feb 2006
Number of Pages
50
DSTKIM No
CA026871
CANDIS No
524838
Format(s):
CD ROM

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