Combinatorial Synthesis of Ni1-x-yMnxGay Thin Films

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Authors
  1. Deschamps, N.C.
  2. Dunlap, R.A.
Corporate Authors
Defence R&D Canada - Atlantic, Dartmouth NS (CAN);Dalhousie Univ, Halifax NS (CAN) Dept of Physics
Abstract
This research was conducted to evaluate the combinatorial synthesis approach and rapid characterization facilities (at Dalhousie University) for the development of Ni-Mn-Ga alloys. A combinatorial thin film of Ni100-x-yMnxGay, where 20 < x < 35 (at. % Mn) and 18 < y < 30 (at. % Ga) was prepared by magnetron sputtering. To create such small composition ranges, new target masks had to be designed. The film was sputtered onto four different substrates; a Si(100) wafer, a masked Si(100) wafer sectioned into 49 discrete dots, a masked alumina plate sectioned into 49 discrete dots, and a Silicone polymer on glass. Microprobe results indicate that the actual ranges that were sputtered were 15 < x < 30 and 6 < y < 16. In general the films were more Ni-rich than expected and the sputtering masks must be redesigned or the power output to the targets must be adjusted. X-ray diffraction patterns on samples sputtered onto the Si(100) wafer showed the presence of a well defined peak consistent with the (220) reflection of the L21 phase of Ni-Mn-Ga and shows that the film has a crystalline structure.

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Report Number
DRDC-ATLANTIC-CR-2005-190 — Contractor Report
Date of publication
01 Sep 2005
Number of Pages
26
DSTKIM No
CA027852
CANDIS No
525719
Format(s):
CD ROM

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