Modélisation ellipsométrique comparative d'un échantillon de nitrure de silicium – Ellipsomètres IRSE de Sopralab vs IR-VASE de Woollam


  1. Kpetsu, J-B.
  2. Baldenberger, G.
  3. Côté, C.
Corporate Authors
Defence R&D Canada - Valcartier, Valcartier QUE (CAN);Plasmionique Inc, Varennes Que (CAN)
A layer of silicon nitride deposited by reactive magnetron sputtering on a silicon substrate has been characterized by ellipsometric modeling using Sopralab’s IRSE system available at DRDC Valcartier. To ensure a good quality of the silicon nitride layers to be used during a manufacturing process of a microbolometer, this analysis is compared to a similar study done on the same sample but with another ellipsometer IR-VASE (J. A. Woollam Co., Inc.) at École Polytechnique de Montréal. The comparison is not limited to the optical constants n&k but is extended to the data acquisition process, the theoretical models of oscillators and software analysis possibilities offered by both systems. This comparative analysis confirmed the reliability of measurements and modeling obtained with the ellipsometer at DRDC Valcartier although those obtained with the IR-VASE show a greater level of details and accuracy due to some discussed differences in the approaches. The optimization and verification of the properties of deposited silicon nitride layers will therefore continue using the IRSE at DRDC Valcartier with the best practices identified during the analysis.

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Report Number
DRDC-VALCARTIER-CR-2010-334 — Contractor Report
Date of publication
01 Nov 2010
Number of Pages
Electronic Document(PDF)

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