Wafer-Level Photocatalytic Water Splitting on GaN Nanowire Arrays Grown by Molecular Beam Epitaxy

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Authors
  1. Wang, D.
  2. Pierre, A.
  3. Kibria, M.D.
  4. Cui, K.
  5. Han, X.
  6. Bevan, K.
  7. Guo, H.
  8. Paradis, S.
  9. Abou-Rachid, H.
  10. Mi, Z.
Corporate Authors
Defence R&D Canada - Valcartier, Valcartier QUE (CAN);McGill Univ, Montreal QUE (CAN)
Abstract
We report on the achievement of wafer-level photocatalytic overall water splitting on GaN nanowires grown by molecular beam epitaxy with the incorporation of Rh/Cr2O3 core-shell nanostructures acting as cocatalysts, through which H2 evolution is promoted by the noble metal core (Rh) while the water forming back reaction over Rh is effectively prevented by the Cr2O3 shell O2 diffusion barrier. The decomposition of pure water intoH2 andO2 by GaN nanowires is confirmed to be a highly stable photocatalytic process, with the turnover number per unit time well exceeding the value of any previously reported GaN powder samples.
Report Number
DRDC-VALCARTIER-SL-2011-536 — Scientific Literature
Date of publication
01 May 2011
Number of Pages
5
DSTKIM No
CA037294
CANDIS No
537044
Format(s):
Electronic Document(PDF)

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