THE EFFECTS OF GATE BIAS AND HYDROGEN ATMOSPHERE ON THE RADIATION RESPONSE OF THE MOSFET

Authors
  1. McGowan, S.
Corporate Authors
Defence Research Establishment Ottawa, Ottawa ONT (CAN)
Abstract
The sensitivity of MOSFET radiation sensors has been measured as a function of gate-to-source bias. The observed sensitivity-bias relation can be explained in terms of hole/electron recombination, charge trapping and charge transport in the oxide. To explain post-irradiation increases in the MOSFET readings, negative-charge trapping and detrapping in the oxide is proposed. The sensitivity of these MOSFETs has been found to be affected by the presence of hydrogen, indicating that hydrogen alters the trapping properties of the oxide. It may be possible to control the sensitivity of these sensors by controlling the hydrogen concentration at the time of hermetic packaging.
Report Number
DREO-TN-88-21 — Technical Note
Date of publication
15 Mar 1988
Number of Pages
23
DSTKIM No
88-04219
CANDIS No
57424
Format(s):
Hardcopy;Originator's fiche received by DSIS

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