TRANSIENT ANNEALING CHARACTERIZATION OF IRRADIATED MOSFETS

Authors
  1. Cousins, T.
  2. Qureshi, K.M.
Corporate Authors
Defence Research Establishment Ottawa, Ottawa ONT (CAN)
Abstract
The electrical response of metal-oxide-silicon (MOS) technolgies to incident nuclear (especially photon) radiation is a very complex, time-dependent function. The report reviews the physical processes governing this response and then experimentally examines them with the aid of the TATS-400 (Transient Annealing Test System). MOSFET responses to steady-state and pulsed photon and electron beams are characterized in terms of such parameters as threshold voltage shift and interface and oxide trap densities. The results show good agreement between experiment and theory in terms of the expected trends, however in order to conduct more meaningful tests, devices with much better-known geometries must be procured.
Report Number
DREO-1030 —
Date of publication
15 Jan 1990
Number of Pages
43
DSTKIM No
90-03373
CANDIS No
65623
Format(s):
Hardcopy;Originator's fiche received by DSIS

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