A PRELIMINARY DEDICATED FACILITY FOR SINGLE EVENT UPSET (SEU) TESTING OF SEMICONDUCTOR COMPONENTS AT THE MCMASTER ACCELERATOR LABORATORY

Authors
  1. Waddington, J.C.
  2. Stark, J.W.
Corporate Authors
McMaster Univ, Hamilton ONT (CAN) Tandem Accelerator Lab;Defence Research Establishment Ottawa, Ottawa ONT (CAN)
Abstract
A single event facility has been developed at the McMaster University Tandem Accelerator (Model FN) which allows rapid particle beam and energy changes to be made thus simulating the cosmic-ray heavy-ion LET distribution. Preliminary experiments have been carried out to examine the physical data-corruption patterns in semiconductor memories caused by these high LETE beams. A series of experiments has been carried out using the MOSAID MS-2200 to monitor the output of the Device Under Test (DUT). The MS-2200 gives a real-time bit-map of the memory (either physical or logical map) and thus allows the processes which cause and propogate data corruption to be analyzed. Results for both DRAMs and SRAMs exposed to a variety of beams have been obtained.
Date of publication
15 Mar 1990
Number of Pages
33
DSTKIM No
90-04154
CANDIS No
66395
Format(s):
Hardcopy;Originator's fiche received by DSIS

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