AN EXAMINATION OF RADIATION-INDUCED BIT-UPSET PATTERNS IN SEMICONDUCTOR MEMORIES

Authors
  1. Cousins, T.
  2. Karam, E.L.
Corporate Authors
Defence Research Establishment Ottawa, Ottawa ONT (CAN)
Abstract
The interaction of photon radiation with semiconductor memories is known to corrupt data stored within by a 'bit-flip' process. Using a MOSAID MS2200 memory tester system, experiments were carried out to determine the number and location of these errors for two DRAMs and one SRAM exposed to LINAC and 60Co sources. The results showed that the errors are not, in general, randomly located and are highly dependent on chip architecture. This is particularly true for the DRAMs where the bits adjacent to decoder and ground lines were observed to be the first to flip.
Report Number
DREO-1038 —
Date of publication
15 May 1990
Number of Pages
44
DSTKIM No
90-04873
CANDIS No
67102
Format(s):
Hardcopy;Originator's fiche received by DSIS

Permanent link

Document 1 of 1

Date modified: