COMPUTER SIMULATION OF PHOTOCURRENTS IN P-N JUNCTIONS USING RADSPICE

Authors
  1. Pepper, G.T.
  2. Stone, R.E.
Corporate Authors
Defence Research Establishment Ottawa, Ottawa ONT (CAN)
Abstract
Computer simulation of radiation effects in electronics is an important research and engineering tool for understanding the interaction of nuclear and space radiation in semiconductor devices and for developing rad-hard electronics at the device, circuit and system level. This report investigates the photocurrent modelling capability of a commercially available SPICE circuit simulation code (RADSPICE) that has integrated radiation effects modelling capability. Specifically, the various models for photocurrent generation in p-n junctions from pulses of ionizing radiation are discussed and sample simulations are provided for each of the photocurrent models. The simulation results are compared with theoretical values and the limitations of the models and range of applicability are discussed. Single-event upset (SEU) modelling in a CMOS static random access memory (SRAM) is illustrated using photocurrent simulation techniques. TRUNCATED
Report Number
DREO-1063 —
Date of publication
15 Dec 1990
Number of Pages
39
DSTKIM No
91-01492
CANDIS No
68699
Format(s):
Hardcopy;Originator's fiche received by DSIS

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