ON CROWDING EFFECTS AND FAILURE MECHANISMS IN HIGH POWER TRANSISTOR SWITCHES

Authors
  1. Chudobiak, W.J.
Corporate Authors
Defence Research Telecommunications Establishment, Ottawa ONT (CAN) Communications Lab
Abstract
The relationship between current crowding and device failure in the high speed saturating epitaxial transistor switch is discussed. Agreement between theory and practice is demonstrated, using a composite large area device comprising an array of small area transistors.
Date of publication
15 Aug 1968
Number of Pages
2
Reprinted from
Vol. 56, No. 12, p2176-2177, Dec68. Proceedings of the IEEE. Repr 3020.
DSTKIM No
69-06027
CANDIS No
74585
Format(s):
Hardcopy;Originator's fiche received by DSIS

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