ON THE STATIC COLLECTOR-EMITTER SATURATION VOLTAGE OF A TRANSISTOR WITH A LIGHTLY DOPED COLLECTOR

Authors
Corporate Authors
Defence Research Telecommunications Establishment, Ottawa ONT (CAN) Communications Lab
Abstract
A one-dimensional analysis which defines the static collector-emitter saturation voltage characteristic of epitaxial and triple-diffused transistors in terms of collector current, base current, and device parameters is given.
Date of publication
15 Dec 1968
Number of Pages
3
Reprinted from
Vol. 57, No. 4, p718-720, Apr69. Proceedings of the IEEE. Repr 3075.
DSTKIM No
69-09013
CANDIS No
76104
Format(s):
Hardcopy;Originator's fiche received by DSIS

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