THE EFFECT OF LASER-INDUCED THERMAL PULSES ON THE THRESHOLD VOLTAGE OF MOSFETS

Authors
  1. Hum, R.H.
  2. Barry, A.L.
Corporate Authors
Communications Research Centre, Ottawa ONT (CAN)
Abstract
The short-term effect of a submillisecond laser pulse on the threshold voltage of metal-oxide-semiconductor field effect transistors was investigated, with negative results. This resolves a minor controversy over a paper presented at a recent radiation-effects conference. A novel method of measuring transient shifts in threshold voltage was developed.
Report Number
1246 —
Date of publication
15 Jun 1973
Number of Pages
8
DSTKIM No
73-05549
CANDIS No
77773
Format(s):
Hardcopy;Originator's fiche received by DSIS

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