AN IMPROVED METALLIZATION PROCESS FOR SILICON TRANSISTORS

Authors
  1. Bellier, S.P.
  2. Ehlert, L.B.
Corporate Authors
Communications Research Centre, Ottawa ONT (CAN)
Abstract
The use of a sandwich layer of poly-crystalline silicon between the silicon wafer and the aluminum metallization can prevent the formation of dissolution pits on silicon devices during subsequent heat treatments. The paper defines design limits for the deposition of the polycrystalline silicon and aluminum layers, necessary to obtain pit-free ohmic contacts. The electrical characteristics of devices fabricated using this process are reported.
Date of publication
01 Jan 1973
Number of Pages
11
Reprinted from
Semiconductor Silicon, 1973, p 304-314
DSTKIM No
74-02265
CANDIS No
78385
Format(s):
Hardcopy

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