Wavelength-size hybrid Si-VO2 waveguide electroabsorption optical switches and photodetectors

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Authors
  1. Joushaghani, A.
  2. Jeong, J.
  3. Paradis, S.
  4. Alain, D.
  5. Aitchison, J.S.
  6. Poon, J.K.S.
Corporate Authors
Defence Research and Development Canada, Valcartier Research Centre, Quebec QC (CAN);Toronto Univ, Toronto ONT (CAN) Dept of Electrical and Computer Engineering
Abstract
Ultra-compact waveguide electroabsorption optical switches and photodetectors with micron- and sub-micron length and compatible with silicon (Si) waveguides are demonstrated using the insulator-metal phase transition of vanadium dioxide (VO2). A 1 µm long hybrid Si-VO2 device is shown to achieve a high extinction ratio of 12 dB and a competitive insertion loss of 5dB over a broad bandwidth of 100 nm near λ = 1550 nm. The device, operated as a photodetector, can measure optical powers less than 1 µW with responsivity in excess of 10 A/W. With volumes that are about 100 to 1000 times smaller than today’s active Si photonic component, the hybrid Si-VO2 devices show the feasibility of integrating transition metal oxides on Si photonic platforms for nanoscale electro-optic elements.
Keywords
electromagnetics;sciences - electrooptic sensing;vandium dioxyde;optical switches
Report Number
DRDC-RDDC-2015-P022 — External Literature
Date of publication
27 May 2015
Number of Pages
12
DSTKIM No
CA040441
CANDIS No
801523
Format(s):
Electronic Document(PDF)

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