Characterization and optimization of SiO2 and Si3N4 thin films – For a smart uncooled IR sensor

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Authors
  1. Paradis, S.
  2. A. Keptsu, J-B.
Corporate Authors
Defence R&D Canada - Valcartier, Valcartier QUE (CAN);Plasmionique Inc, Varennes Que (CAN)
Abstract
This document reports on the characterization and optimization of two thin films, namely silicon oxide and silicon nitride, that are used in the fabrication of the smart uncooled IR sensor with wavelength selectivity. These thin films play an important role in the stack of films forming the sensor. In the course of the fabrication of the sensor, the films were found not to be optimized to play their function. Their stoichiometry and physical properties such as density, absorptance, optical constants, residual stress were characterized and optimized with a view to maximizing the performance of the optical device.

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Keywords
nitride thin film
Report Number
DRDC-VALCARTIER-TM-2012-270 — Technical Memorandum
Date of publication
01 Feb 2013
Number of Pages
48
DSTKIM No
CA046375
CANDIS No
806774
Format(s):
Electronic Document(PDF)

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