THE SATURATION CHARACTERISTICS OF n-p-nu-n POWER TRANSISTORS

Authors
  1. Chudobiak, W.J.
Corporate Authors
Communications Research Centre, Ottawa ONT (CAN)
Abstract
The transport equations and charge-control concepts are applied in an analysis of a static conductivity-modulation mechanism occurring in the collector region of n-p-nu-n power transistors. This results in an expression for collector-emitter saturation voltage as a function of terminal currents and device parameters. An expression is derived which describes the current gain characteristics of saturated epitaxial and triple-diffused devices. The analysis is also used to illustrate the relationship between the emitter metallization resistance, collector charge storage, and the turn-off crowding mechanism experienced by high-frequency saturating transistor switches.
Date of publication
01 Jan 1970
Number of Pages
10
Reprinted from
Reprinted from IEEE Transactions on Electron Devices, vol ED-17, no 10, 1970, p843-852
DSTKIM No
71-02727
CANDIS No
9009
Format(s):
Hardcopy

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