GALLIUM ARSENIDE MATERIALS AND DEVICES AND THE GUNN EFFECT

Authors
  1. Edwards, W.D.
  2. Hartman, W.A.
  3. Torrens, A.B.
  4. Butler, D.L.
Corporate Authors
Communications Research Centre, Ottawa ONT (CAN)
Abstract
The report covers the following topics: Gallium Arsenide Gunn Effect Devices, Gallium Arsenide Vapour Epitaxial Growth, Material Processing, Material Assessment, Contacts to Gallium Arsenide, Diode Fabrication and Testing, Theory of Steady High-Field Domains, Computer-Simulations of NDC Diodes, and The Gunn Effect: Future Applications.
Report Number
1303 —
Date of publication
15 Dec 1976
Number of Pages
126
DSTKIM No
77-02636
CANDIS No
99388
Format(s):
Hardcopy

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